QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振，尺寸为20.7*13.1mm,频率为50MHZ，欧美进口【晶振，OSC晶振，有源晶振，有源晶体振荡器，高品质晶振，低抖动晶振，低㊣　相位晶振，高精度◇晶振，低电压晶振，低耗能∩晶振，该ω晶体振荡器是基于DIL封装的混合技术。该XO执行+/‐50至+/‐100pm的整体频率★稳定性(相对于温度范围和校准在25°C，负载ζ和电源的变化)和老化+/‐5ppm每年。这参考适用于◆坚固耐用的无线电系统，例如高速列车或航空电子设备。

OscillatorCrystal 产品主要应用范围：推荐用※于嵌入式应用，扩展温度范︾围和坚固的环境，以及航空电Ψ子，无卐线电系统等领域。QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振.

QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振，尺寸为20.7*13.1mm,频率为50MHZ，欧美进口晶振，OSC晶振，有源晶振，有源晶体振荡器，高品质晶振，低抖动晶振，低相位晶振，高精度晶振，低电压晶振，低耗能晶振，该晶体振荡器是基∏于DIL封装的混合技术。该XO执行+/‐50至+/‐100pm的整体频率稳∞定性(相对于温度范围和校准在25°C，负载和电源的变化)和老化+/‐5ppm每年。这参考适用于坚固耐用的◢无线电系统，例如高速列车或航空电子设备。

OscillatorCrystal产品主要应用范围：推荐ζ　用于嵌入式应用，扩展温度范围和坚固的环境，以及航空电子，无线电系统等领域。QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振.

QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振参数表

1.Environmentalconditions
ParameterConditions/remarksMinNomMaxUnit
Operating Temperature			Temperature option DT			‐40	25	85		°C
			Temperature option AY			‐55	25	125		°C
Switch‐on Temperature			TSo			‐55		125		°C
Non‐Operating Temperature			TNOp			‐55		125		°C
Random Vibration			Level as per MIL‐STD‐ 202, Method 214, Condition I‐ F (20 Grms)
Sine Vibration			Level as per MIL‐STD‐ 202, Method 204, Condition E (50G)
Shocks			Mechanical shock as per MIL‐STD‐ 202, Method 213, cond A (half sine with a peak acceleration of 300g for duration of 3 msec)
Acceleration			Acceleration as per MIL‐STD‐883, Method 2001, condition A (5000g, during 60s in Y1)

ParametersConditions/remarksMinNomMaxUnit
Power supply			Option BH			3.13	3.3	3.465		V
			Option AH			4.5	5	5.5		V
Load Impedance						13	15	18		pF

ParametersConditions/RemarksMinTypMaxUnit
Nominal Frequency								50		MHz
Steady state input current power							20			mA
Global Frequency stability (1)			Absolute frequency drift option 50					± 50		ppm
			Absolute frequency drift option 100					± 100		ppm
Initial frequency accuracy							± 15			ppm
Frequency‐temperature stability			Temperature option DT				± 20			ppm
			Temperature option AY				± 25			ppm
Frequency variation vs. supply voltage			Over Operating Temperature				± 3			ppm
Frequency variation vs. load			Over Operating Temperature				± 5			ppm
Frequency ageing			Over 15 years				± 12			ppm
Start up time								10		ms
Output waveform			AHCMOS compatible			Square
Output level VOL			Supply option BH					0.4		V
			Supply option AH					0.5		V
Output level VOH			Supply option BH			2.4				V
			Supply option AH			4.5				V
Duty cycle						40		60		%
			Option R			45		55		%
Rise time			10%‐90% of Vcc, frequency < 10 MHz				10			ns
			10%‐90% of Vcc, frequencyN10 MHz				5			ns
Fall time			90%‐ 10% of Vcc, frequency < 10 MHz				10			ns
			90%‐ 10% of Vcc, frequency ≥ 10 MHz				5			ns
Note 1 : Including initial accuracy+freq temp stability+power supply stab+ageing over 15 years

QEN55-AHRIDT50SB/T50MHZ,Rakon晶振,XO振荡器,6G无线设备晶振 尺寸图

产品特征：

混合产品与模具和电线结合到陶瓷基板上
3点晶体谐振器。

外壳类型:DIL封装14引脚20.7x13.1x5.1mm典型

频率范围:1.5MHz至100MHz

温度范围:从‐40°C到+85°C到‐55°C到+125°C

总体频率稳定性与温度范围和校准在25°C

负载和电源变化:总体+/‐50至+/‐100pm

每年老化:第一年45°C时+/‐5ppm

输出波形:方形;三态输出

电源电压:+3.3V或+5V

可选:R:占空比50/50;T:锡制销;筛选B

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