535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振，美国进口晶振，Silicon品牌晶振，型号：Si535，编码为：535BB156M250DG，频率为：156.250MHz，电压：3.3V，LVDS输出差分晶振，温度稳定性：±20ppm，工作温度范围：-40℃至+85℃，小体积晶振尺寸：7.0x5.0mm封装，六脚贴片晶振№，有源晶振，石英晶振，差分晶体振荡器。应用程序：10/40/100G数据中心，10G以太网，交换机/路由器，光纤通道/SAS/存储，企业服务→器，网络，电信，光模块，无线网络等应∮用。

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振，美国进口晶振，Silicon品牌晶振，型号：Si535，编码为：535BB156M250DG，频率为：156.250MHz，电压：3.3V，LVDS输出差分晶振，温度稳定性：±20ppm，工作温度范围：-40℃至+85℃，小体积晶振尺寸：7.0x5.0mm封装，六脚贴片晶振，有源晶振，石英晶振，差分晶体振荡器。应用程序：10/40/100G数据中心，10G以太网，交换机/路由器，光纤通道/SAS/存储，企业服务器，网络，电信，光模块，无线网络等应用。
Si535 XO利用天空解决方案的先进DSPLL®电路提供一个高速差分频率的超低抖动时钟。与传统的XO不同，每∞个输出频率都需要一个不同的晶体，而Si535石英晶振使用一个固定的晶体来提供一∮个大范围的输出频率。这种基于☆集成电路的方法允许晶体谐振器提供特殊的频率稳定性和可靠性。此外，DSPLL时钟合成提供了优越的电源噪声抑制，简化了在通信系统中通常发现卐的噪声环境中产生低抖动时钟的任务。基于Si535 IC的XO在装运时被工厂编程，从而消除了与自定义振荡器相关的长时间的前置时间。

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,产品特点：

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,参数表

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Nominal Frequency1

fO

LVPECL/LVDS

156.250

MHz

Initial Accuracy

fi

Measured at +25 °C at time of shipping

—

±1.5

—

ppm

Temperature Stability1,2

–7 –20

— —

+7 +20

ppm

Aging

fa

Frequency drift over first year

±3

ppm

Frequency drift over 20 year life

—

—

±10

ppm

Total Stability2

Temp stability = ±20 ppm

—

—

±31.5

ppm

Temp stability = ±7 ppm

—

—

20

Powerup Time3

tOSC

TA= –40°C — +85°C

10

ms

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,尺寸图

石英晶体∑振荡器	品牌	型号	频率	电压	频率稳定度	包装/封装
535FB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
SI50122-A4-GM	Silicon晶振	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
536BB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536AB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536EB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536BB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
536AB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
535EB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
536EB125M000DG	Silicon晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535BB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
535BB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
535FB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
535AB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
SI50122-A1-GM	Silicon晶振	SI50122-A1	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A2-GM	Silicon晶振	SI50122-A2	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
535AB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB125M000DG	贴片晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535EB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
500DLAA125M000ACF	Silicon晶振	Si500D	125MHz	2.5V	±150ppm	6-SMD, No Lead
500DLAA200M000ACF	Silicon晶振	Si500D	200MHz	2.5V	±150ppm	6-SMD, No Lead
590AB70M6560DG	Silicon晶振	Si590	70.656MHz	3.3V	±25ppm	6-SMD, No Lead
590FA200M000DG	Silicon晶振	Si590	200MHz	2.5V	±50ppm	6-SMD, No Lead
590DA156M250DG	Silicon晶振	Si590	156.25MHz	3.3V	±50ppm	6-SMD, No Lead
591BB300M000DG	Silicon晶振	Si591	300MHz	3.3V	±25ppm	6-SMD, No Lead
550CD74M2500DGR	Silicon晶振	Si550	74.25MHz	3.3V	±50ppm	6-SMD, No Lead
514GBB000118AAG	Silicon晶振	Si514	156.25MHz	2.5V	±25ppm	6-SMD, No Lead
550AE100M000DGR	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead
550AE100M000DG	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead
SI50122-A3-GM	Silicon晶振	SI50122-A3	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A5-GM	Silicon晶振	SI50122-A5	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A6-GM	Silicon晶振	SI50122-A6	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A1-GMR	Silicon晶振	SI50122-A1	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A2-GMR	Silicon晶振	SI50122-A2	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A3-GMR	Silicon晶振	SI50122-A3	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A4-GMR	Silicon晶振	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A5-GMR	Silicon晶振	SI50122-A5	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A6-GMR	Silicon晶振	SI50122-A6	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN