86-0755-27838351
频率:48MHZ
尺寸:3.20mmx2.50mm
Microchip贴片振荡器|6G移动应用▼晶振|DSC1001CI1-048.0000,尺寸3.20mmx2.50mm,频率48MHZ,输出逻辑 CMOS,电压1.8V ~ 3.3V,脚位4-SMD,XO时钟振∮荡器(标准) ,Microchip振荡器,欧美进口晶振,有源贴片晶振,有源▃晶体振荡器,MEMS晶振,OSC晶振,CMOS输出晶振,低电压有源晶振,低功耗〗有源晶振,低相位有源晶⊙振,高性能有源◇晶振,小体积有源晶振,移动应用』有源晶振,消ξ 费电子专用有源晶振,便携式电子产品晶振,工业应用有源晶振,监控∮摄像头晶振,具有超高的稳定性能以及耐压性能,很适合用于移动应用∞程序,消费类电子产品,便携式电子设备,DVR、CCTV、监控◥摄像头,低姿态应用,工业应用等领域。
DSC1001/3/4是一种基于硅MEMS的CMOS系列SPXO晶体振荡器,在大范围的电源电压和温☆度范围内提供优异的抖动和稳定性能。该设备的工作范围为1 MHz至150 MHz,电源电压█在1.8至3.3伏之间,温度范♀围高达-40°C至105°C。DSC1001/3/4包含了一个全硅谐振器,它非常坚固,几乎不◥受应力相关裂缝的影响,这是晶体振荡器常】见的。在不牺牲当今①系统所需的性能和稳定性的情况下,无晶体设计允许更高水平的可靠性,使DSC1001/3/4非常适合坚☆固、工业和便○携式的应用,其中应力、冲击█和振动可能会损坏基于石英晶体的系统。DSC1001/3/4有工业标准软件包,可以“插入”到与标准有源晶体振荡』器相同的PCB足迹。DSC1003和DSC1004具有与DSC1001相同的功能和性能,但分别具有更高的输出驱动器,分别为25pF和40pF.Microchip贴片振荡器|6G移动☆应用晶振|DSC1001CI1-048.0000.
Microchip贴片振荡器|6G移动应用晶№振|DSC1001CI1-048.0000,尺寸3.20mmx2.50mm,频率48MHZ,输出逻辑 CMOS,电压1.8V ~ 3.3V,脚位4-SMD,XO时钟振荡器(标准) ,Microchip振荡器,欧美进口晶振,有源贴片晶振,有源晶体╲振荡器,MEMS晶振,OSC晶振,CMOS输出晶振,低电压有源晶振,低︼功耗有源晶振,低相位有源晶振,高性能有源晶振,小体积有源晶振,移动⊙应用有源晶振,消费电子专用有源晶振,便携式电子产品晶振,工业应用有源晶振,监控摄◢像头晶振,具有超高的稳定性能以及耐压性能,很适合用于移动应用程序,消费类电子产品,便携式电子设备,DVR、CCTV、监控〓摄像头,低姿态应用,工业应用等领域。
DSC1001/3/4是一种基于硅MEMS的CMOS系列SPXO晶体振荡器,在大范围的电源电压和温度范围内提供优异的抖动和稳定性能。该设备的工作范围为1 MHz至150 MHz,电ξ源电压在1.8至3.3伏之间,温度范围高达-40°C至105°C。DSC1001/3/4包含了一个全硅谐振器,它非常坚固,几乎不受应力相关裂缝的影响,这是晶体振荡器↘常见的。在不牺牲当今系统所需的性能和稳定性的情况下,无晶体设计允许更高水平的可靠性,使DSC1001/3/4非♂常适合坚固、工业和便携式的〗应用,其中应力、冲击和振动可能会损坏基于石英晶体的系统。DSC1001/3/4有工业标准软件包,可以“插入”到与标准有源晶体振荡器相同的PCB足迹。DSC1003和DSC1004具有与DSC1001相同的功能和性能,但分别具有更高的输出驱动器,分别为25pF和40pF.Microchip贴片振荡器|6G移动应用晶振|DSC1001CI1-048.0000.
Microchip贴片振荡器|6G移动应用晶振|DSC1001CI1-048.0000 参数表
Parameters | Sym. | Min. | Typ. | Max. | Units | Conditions | ||||||||||
Frequency | F0 |
|
48 |
|
MHz | Single Frequency | ||||||||||
Frequency Tolerance | Δf | ±10 | ppm |
Includes frequency variations due to initial tolerance, temperature and power supply voltage |
||||||||||||
±20 | ||||||||||||||||
— | — | ±25 | ||||||||||||||
±50 | ||||||||||||||||
Aging | Δf | ±5 | ppm | 1 year @ +25°C | ||||||||||||
Supply Current, Standby | IDD | — | — | 15 | µA | T = +25°C | ||||||||||
Output Startup Time (Note 1) |
tSU | — | 1.0 | 1.3 | ms | T = +25°C | ||||||||||
Output Disable Time | tDA | 20 | 100 | ns | ||||||||||||
Output Duty Cycle | SYM | 45 | 55 | % | ||||||||||||
Input Logic Level High | VIH | 0.75 x V DD | — | — | V | — | ||||||||||
Input Logic Level Low | VIL | 0.25 x V DD | V | |||||||||||||
V DD = 1.8V | ||||||||||||||||
Supply Current, No Load | IDD | — | 6.0 | 6.3 | mA | 1 MHz |
CL = 0 pF, RL = ∞ , T = +25°C |
|||||||||
6.5 | 7.1 | 27 MHz | ||||||||||||||
7.2 | 8.5 | 70 MHz | ||||||||||||||
— | 8.3 | 11.9 | 150 MHz | |||||||||||||
Output Logic Level High | V OH | 0.8 x V DD | V | –6 mA, DSC1004, CL = 40 pF | ||||||||||||
0.8 x V DD | –6 mA, DSC1003, CL = 25 pF | |||||||||||||||
0.8 x V DD | — | — | –4 mA, DSC1001, CL = 15 pF | |||||||||||||
Output Logic Level Low | VOL | — | — | 0.2 x V DD | V | 6 mA, DSC1004, CL = 40 pF | ||||||||||
0.2 x V DD | 6 mA, DSC1003, CL = 25 pF | |||||||||||||||
— | — | 0.2 x V DD | 4 mA, DSC1001, CL = 15 pF |
有源晶振产品特性:
频率范围: 1MHz至150MHz在温度下的异常
稳定性- ±10 ppm,±20 ppm,±25 ppm,±50 ppm
工作电压- 1.7至3.6V工作温度范围- Ext
工业-40°至105°-工业-40°至85°-商用-20°至70°
低运行和备用电流-6 mA运行(1MHz)
15µA备用(最大)
超微型足迹- 2.5毫米x 2.0毫米x 0.85毫米- 3.2毫米x 2.5毫米x 0.85毫米
- 5.0毫米x 3.2毫米x 0.85毫米- 7.0毫米x 5.0毫米x 0.85毫米
MIL-STD 883无冲击和抗▲振动Pb,RoHS,
达到SVHC符合AEC-Q100可靠性合格※
更多相关Microchip晶振型号
Manufacturer Part Number原厂代码 | 晶振厂家 | Series型号 | Type 类型 | Frequency 频率 | Voltage - Supply电压 |
DSC1001DL5-025.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 25MHz | 1.8 V ~ 3.3 V |
DSC1001CE2-006.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 6MHz | 1.8 V ~ 3.3 V |
DSC1001CI1-050.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 50MHz | 1.8 V ~ 3.3 V |
DSC1001CI2-012.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 12MHz | 1.8 V ~ 3.3 V |
DSC1001CI2-033.3333 | Microchip Technology | DSC1001 | MEMS (Silicon) | 33.3333MHz | 1.8 V ~ 3.3 V |
DSC1001CI5-004.9152 | Microchip Technology | DSC1001 | MEMS (Silicon) | 4.9152MHz | 1.8 V ~ 3.3 V |
DSC1122CI5-200.0000 | Microchip Technology | DSC1122 | MEMS (Silicon) | 200MHz | 2.25 V ~ 3.6 V |
DSC1001CI1-048.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 48MHz | 1.8 V ~ 3.3 V |
DSC1001CI1-026.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 26MHz | 1.8 V ~ 3.3 V |
DSC1001AI2-050.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 50MHz | 1.8 V ~ 3.3 V |
DSC1001AL2-027.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 27MHz | 1.8 V ~ 3.3 V |
DSC6083HE1A-032K800T | Microchip Technology | DSC60XX | MEMS (Silicon) | 32.8kHz | 1.71 V ~ 3.63 V |
DSC6011HI1A-002.5000T | Microchip Technology | DSC60XX | MEMS (Silicon) | 2.5MHz | 1.71 V ~ 3.63 V |
DSC6013HI1A-002.5000T | Microchip Technology | DSC60XX | MEMS (Silicon) | 2.5MHz | 1.71 V ~ 3.63 V |
DSC6083HI2A-002K000T | Microchip Technology | DSC60XX | MEMS (Silicon) | 2kHz | 1.71 V ~ 3.63 V |
DSC6083CI2A-032K768 | Microchip Technology | DSC60XX | MEMS (Silicon) | 32.768kHz | 1.71 V ~ 3.63 V |
DSC6001CI2A-016.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 16MHz | 1.71 V ~ 3.63 V |
DSC6003CI2A-012.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 12MHz | 1.8 V ~ 3.3 V |
DSC6003CI2A-024.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 24MHz | 1.8 V ~ 3.3 V |
DSC6003CI2A-016.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 16MHz | 1.8 V ~ 3.3 V |
DSC6101CI2A-027.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 27MHz | 1.71 V ~ 3.63 V |
DSC6111CI2A-012.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 12MHz | 1.71 V ~ 3.63 V |
DSC6102CI2A-100.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 100MHz | 1.71 V ~ 3.63 V |
DSC6101CI2A-050.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 50MHz | 1.71 V ~ 3.63 V |
DSC6101CI2A-025.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 25MHz | 1.71 V ~ 3.63 V |
DSC6003JI2A-048.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 48MHz | 1.71 V ~ 3.63 V |
DSC6101JI2A-026.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 26MHz | 1.71 V ~ 3.63 V |
DSC6101JI2A-048.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 48MHz | 1.71 V ~ 3.63 V |
DSC6003JI2A-016.0000 | Microchip Technology | DSC60XX | MEMS (Silicon) | 16MHz | 1.8 V ~ 3.3 V |
DSC6101JI2A-012.2880 | Microchip Technology | DSC6100 | MEMS (Silicon) | 12.288MHz | 1.71 V ~ 3.63 V |
DSC6101JI2A-050.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 50MHz | 1.71 V ~ 3.63 V |
DSC6102JI2A-100.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 100MHz | 1.71 V ~ 3.63 V |
DSC6111JI2A-024.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 24MHz | 1.71 V ~ 3.63 V |
DSC6101JI2A-012.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 12MHz | 1.71 V ~ 3.63 V |
DSC6101JI2A-027.0000 | Microchip Technology | DSC6100 | MEMS (Silicon) | 27MHz | 1.71 V ~ 3.63 V |
DSC1121CI2-050.0000 | Microchip Technology | DSC1121 | MEMS (Silicon) | 50MHz | 2.25 V ~ 3.6 V |
DSC1121CI2-025.0000 | Microchip Technology | DSC1121 | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V |
DSC1121BI2-025.0007 | Microchip Technology | DSC1121 | MEMS (Silicon) | 25.0007MHz | 2.25 V ~ 3.6 V |
DSC1121AE2-025.0000 | Microchip晶振 | DSC1121 | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V |
DSC1101CI1-025.0000 | Microchip Technology | DSC1101 | MEMS (Silicon) | 25MHz | 2.25 V ~ 3.6 V |
DSC1001CC1-008.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 8MHz | 1.8 V ~ 3.3 V |
DSC1101DL1-027.0000 | Microchip Technology | DSC1101 | MEMS (Silicon) | 27MHz | 2.25 V ~ 3.6 V |
DSC1001CE1-066.6666 | Microchip Technology | DSC1001 | MEMS (Silicon) | 66.6666MHz | 1.8 V ~ 3.3 V |
DSC1001CE1-019.2000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 19.2MHz | 1.8 V ~ 3.3 V |
DSC1033CE2-022.5792 | Microchip Technology | DSC1033 | MEMS (Silicon) | 22.5792MHz | 3.3V |
DSC1001DI1-004.9152 | Microchip Technology | DSC1001 | MEMS (Silicon) | 4.9152MHz | 1.8 V ~ 3.3 V |
DSC1033AE1-024.0000 | Microchip Technology | DSC1033 | MEMS (Silicon) | 24MHz | 3.3V |
DSC1001AC1-027.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 27MHz | 1.8 V ~ 3.3 V |
DSC1033CE2-074.2500 | Microchip Technology | DSC1033 | MEMS (Silicon) | 74.25MHz | 3.3V |
DSC1033BE1-050.0000 | Microchip Technology | DSC1033 | MEMS (Silicon) | 50MHz | 3.3V |
DSC1001AC1-008.0000 | Microchip Technology | DSC1001 | MEMS (Silicon) | 8MHz | 1.7 V ~ 3.6 V |
DSC1033DI1-048.0000 | Microchip Technology | DSC1033 | MEMS (Silicon) | 48MHz | 3.3V |
6G以太网晶振,XUX515025.000000K,Renesas有源振荡器,尺寸5.00x3.20mm,频率25MHZ,输出逻辑HCMOS,欧美进口晶振,Renesas贴片晶振,OSC振荡器,XO时钟振荡器,HCMOS输出晶振,SMD振荡器,进口有源振荡器,有源贴片晶振,有源晶体振荡器,石¤英晶体振荡器〖〒,六脚贴片晶振,5032mm有源晶振,25MHZ有源振荡器,高性能有源晶振,高品质有源晶振,低电压有源晶振,低损耗有源晶振,低功耗有】源晶振,仪器设备晶振,平板电脑晶振,智能家居晶振,6G以太网专用晶振,6G路由器」晶振,具有低□功耗高品质的特点。
XU器件是低相位噪声石英基PLL振荡器,支持大范围的频率和输出接口类型。这些石英晶体振荡器◥被设计为操作在三种不同的电源供应,并可在多种包装尺寸和温度等级。通过专利的一次性程序(OTP)允许无限内存保质期,XU设备可以编程产生从16 kHz到1500MHz的输出频率,分辨率低至1Hz。该系列设备的配置☆能力允许样品和大型生产订单的快速交付时□ 间。6G以太网晶振,XUX515025.000000K,Renesas有源振荡器.
MG7050HAN差分振荡器,X1M0004310004,EPSON晶振,6G无线通信晶振,尺寸为7.0*5.0mm,频率为100MHZ,支持输出HCSL,差分石英晶振,OSC晶振,有源晶体振荡器,日本爱普生晶振,SPXO晶体振荡器,低抖动差分振荡器,低耗能差分振荡↘器,高频差分晶①振,本产品是利用锯波〓谐振器的基本振荡的HCSL输出的高频振荡器。这实现了频率为100~200MHz的低抖动※和低噪声。
差分贴片晶振产品非常适用于服务器、存储等参考时∞钟,以及6G无线通信,智能家居,仪器设备,蓝牙模块,光通信,交换机等领域。MG7050HAN差分振荡器,X1M0004310004,EPSON晶振,6G无线通信晶振.
ACT艾西迪晶振,1700时钟振荡器,CL1600BBISEPL-PF,6G路由器晶振,尺寸12.9*12.9mm,频率为16MHZ,正方型Ψ钟振,大↙尺寸振荡器,石英晶体振荡器,有源晶振,OSC晶振,高品质晶振,高性能晶振,低抖动〓晶振,低电压晶振,医疗产品专用晶振,仪器设备晶振,数码电子晶振,安△防专用晶振,6G应用晶振,6G无线设备晶振,6G路由器晶振。
石英晶体振荡器产品主要应用㊣范围:医疗产品,仪器设备,数码电子,安防,6G应用,6G无线设备,6G路由器等领域。ACT艾西迪晶振,1700时钟振荡器,CL1600BBISEPL-PF,6G路由器晶振.
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