M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振荡器，美国进口晶振，Microchip晶振，型号：M9112X1系列，编码为：M911201NI2-20M48000，高性能MEMS振荡器，小体积晶振尺寸：7.0x5.0mm，六脚贴片晶振，工作温度范围：-40℃至+85℃，频率稳定性：±50ppm，频率为：20.000MHz，石英晶体振荡器，石英晶振，有源晶振。具有超小型，轻薄型，高性能，高品质，耐热及耐环境特点。应用程序：计算、存储、网络、电信、工业控制，SATA、SAS、以太网、PCI Express、视频、Wi-Fi，军事系统等。

M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振荡器，产品特点：

•2.5 MHz和170 MHz之间的任何频率，精确到小数点▃后6位
•CMOS兼容输出石英贴片晶振
•极低相位抖动：0.65 ps（12 kHz至20 MHz）
•温度范围广：-40°C至+125°C
•标准6引线封装：7.0×5.0mm，5.0×3.2mm、3.2×2.5mm、2.5×2.0mm
•2.5μA时的低待☉机电流（典型值）

M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振荡器,参数表

Parameter			Symbol		Min.	Typ.	Max.		Units	Conditions
Output Frequency			fOUT		20.0				MHz
Frequency Stability			fSTAB		–20		+20		ppm	Inclusive of initial tolerance at +25°C and variations over operating temperature, rated power supply voltage, and load.
					–25		+25
					–50		+50
Aging			fAGING		–5		+5		ppm	25°C, ±1 ppm after 1st year
Operating Temperature Range			TOP		–40		+125		°C	Automotive
					–40		+105			Extended Industrial
					–40		+85			Industrial
					–20		+70			Commercial
Supply Voltage			VDD		2.25	2.5	2.75		V
					2.52	2.8	3.08
					2.97	3.3	3.63
Current Consumption			IDD		—	27	—		mA	No load condition, f = 100 MHz, VDD= 2.5V, 2.8V, or 3.3V
OE Disable Current			IOD			23			mA	f = 100 MHz, OE Disabled
Standby Current			ISTD			2.5	5		µA	VDD= 3.3V
Duty Cycle			DC		45		55		%
Rise Time			tr		—	1.3	—		ns	20% to 80% VDD; CL= 15 pF Standard Drive Strength
Fall Time			t f		—	1.3	—		ns	20% to 80% VDD; CL= 15 pF Standard Drive Strength
Output High Voltage			VOH		80%				VDD	+10 mA
Output Low Voltage			VOL				20%		VDD	–10 mA
Input High Voltage			VIH		75%				VDD	Pin 1, OE or ST
Input Low Voltage			VIL				25%		VDD	Pin 1, OE or ST
Enable Pull-Up Resistor			ZIN			1.5			MΩ
Start-Up Time			tSTART			5.5	6		ms	T = +25°C

M911201NI2-20M48000,7050mm,20MHz,Microchip高性能MEMS振荡器,尺寸图