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                全球首家上百万进口晶振代理商

                深圳市康华尔电子有限公司

                国际进口晶振品牌首选康华尔

                首页 Silicon晶振

                Silicon振荡器,510ABA125M000BAGSi510差分晶振,6G电信晶振,

                Silicon振荡器,510ABA125M000BAGSi510差分晶振,6G电信晶振,Silicon振荡器,510ABA125M000BAGSi510差分晶振,6G电信晶振,

                产品简介

                Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振,尺寸为5.00mmx3.20mm,频率125MHZ,电压为3.3V,频率稳定性25ppm.输出为LVPECL,美国Silicon晶振,差分贴片晶振,LVPECL输出晶振,差分晶体振荡器,石英晶体振荡器,有源贴片▆晶振,SMD振荡器,低功耗差分振荡器,XO时钟振荡器,低电压晶振,低相噪振荡器,低相位差分⌒ 晶振,低抖动差分晶振,5032mm有源晶振,产品具有低功耗低抖动低相位的特点。

                有源晶振产品主要应用范围十分广泛,主要◣应用于SONET/SDH/OTN网络,千兆以太网,光纤通道/SAS/SATA,PCI Express总线,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等领域.Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振.


                产品详情

                1

                Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振,尺寸为5.00mmx3.20mm,频率125MHZ,电压为3.3V,频率稳定性25ppm.输出为LVPECL,美国Silicon晶振,差分贴片晶振,LVPECL输出晶振,差分晶体振荡器,石英晶体振荡器,有源贴片晶振,SMD振荡器,低功耗差分振荡器,XO时钟振荡器,低电压晶振,低相噪振荡器,低相位差分晶振,低抖动差分晶振,5032mm有源晶振,产品具有低功耗低抖动低相位的特点。

                有源晶振产品主要应用范围十分广泛,主要应用于SONET/SDH/OTN网络,千兆以太网,光纤通道/SAS/SATA,PCI Express总线,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等领域.Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振.2

                Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振参数表

                Parameter Symbol Test Condition Min Typ Max Unit
                Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V
                2.5 V option 2.25 2.5 2.75 V
                1.8 V option 1.71 1.8 1.89 V
                Supply Current IDD CMOS, 100 MHz,
                single-ended
                21 26 mA
                LVDS
                (output enabled)
                19 23 mA
                LVPECL
                (output enabled)
                39 43 mA
                HCSL
                (output enabled)
                41 44 mA
                Tristate
                (output disabled)
                18 mA
                OE "1" Setting VIH See Note 0.80 x VDD V
                OE "0" Setting VIL See Note 0.20 x VDD V
                OE Internal Pull-Up/Pull-
                Down Resistor*
                RI 45
                Operating Temperature TA –40 85 oC
                Parameter Symbol Test Condition Min Typ Max Unit
                Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V
                2.5 V option 2.25 2.5 2.75 V
                1.8 V option 1.71 1.8 1.89 V
                Supply Current IDD CMOS, 100 MHz,
                single-ended
                21 26 mA
                LVDS
                (output enabled)
                19 23 mA
                LVPECL
                (output enabled)
                39 43 mA
                HCSL
                (output enabled)
                41 44 mA
                Tristate
                (output disabled)
                18 mA
                OE "1" Setting VIH See Note 0.80 x VDD V
                OE "0" Setting VIL See Note 0.20 x VDD V
                OE Internal Pull-Up/Pull-
                Down Resistor*
                RI 45
                Operating Temperature TA –40 85 oC
                Parameter Symbol Test Condition Min Typ Max Unit
                CMOS Output Logic
                High
                VOH 0.85 x VDD V
                CMOS Output Logic
                Low
                VOL 0.15 x VDD V
                CMOS Output Logic
                High Drive
                IOH 3.3 V –8 mA
                2.5 V –6 mA
                1.8 V –4 mA
                CMOS Output Logic
                Low Drive
                IOL 3.3 V 8 mA
                2.5 V 6 mA
                1.8 V 4 mA
                CMOS Output Rise/Fall
                Time
                (20 to 80% VDD)
                TR/TF 0.1 to 212.5 MHz,
                CL= 15 pF
                0.45 0.8 1.2 ns
                0.1 to 212.5 MHz,
                CL= no load
                0.3 0.6 0.9 ns
                LVPECL Output
                Rise/Fall Time
                (20 to 80% VDD)
                TR/TF 100 565 ps
                HCSL Output Rise/Fall
                Time (20 to 80% VDD)
                TR/TF 100 470 ps
                LVDS Output Rise/Fall
                Time (20 to 80% VDD)
                TR/TF 350 800 ps
                LVPECL Output
                Common Mode
                VOC 50 Ω to VDD– 2 V,
                single-ended
                VDD–
                1.4 V
                V
                LVPECL Output Swing VO 50 Ω to VDD– 2 V,
                single-ended
                0.55 0.8 0.90 VPPSE
                LVDS Output Common
                Mode
                VOC 100 Ω line-line
                VDD= 3.3/2.5 V
                1.13 1.23 1.33 V
                100 Ω line-line, VDD= 1.8 V 0.83 0.92 1.00 V
                LVDS Output Swing VO Single-ended, 100 Ω differential
                termination
                0.25 0.35 0.45 VPPSE
                HCSL Output Common
                Mode
                VOC 50 Ω to ground 0.35 0.38 0.42 V
                HCSL Output Swing VO Single-ended 0.58 0.73 0.85 VPPSE
                Duty Cycle DC All formats 48 50 52 %
                3Silicon振荡器,510ABA125M000BAG,Si510差分晶振,6G电信晶振 尺寸图Si510 Si511

                差分晶振产品特性:

                支持来自的任何频率100kHz至250MHz

                低抖动操作

                完全稳定包括10年老化

                全面的生产测试

                电源噪声滤波 3.3、2.5或1.8V工作电压差异(LVPECL,LVDS, HCSL)或CMOS输出选项

                可选集成1:2CMOS扇出缓冲器

                行业标准5x7、3.2x5、 和2.5x3.2毫米封装

                无铅,符合RoHS标准

                –40至85摄氏度操作

                Si510 Si511 1Si510 Si511 2

                更多相关Silicon晶振型号

                Manufacturer Part Number原厂代码 晶振厂家 Series型号 Frequency 频率 Voltage - Supply电压 Frequency Stability频率ξ稳定度
                530BA125M000DG Silicon Labs Si530 125MHz 3.3V ±50ppm
                531FB125M000DG Silicon Labs Si531 125MHz 2.5V ±20ppm
                530BB100M000DG Silicon Labs Si530 100MHz 3.3V ±20ppm
                530FC156M250DG Silicon Labs Si530 156.25MHz 2.5V ±7ppm
                510ABA125M000BAG Silicon Labs Si510 125MHz 3.3V ±25ppm
                511BBA74M2500BAG Silicon Labs Si511 74.25MHz 3.3V ±25ppm
                510BBA156M250BAG Silicon Labs Si510 156.25MHz 3.3V ±25ppm
                511ABA156M250BAG Silicon Labs Si511 156.25MHz 3.3V ±25ppm
                510FBA200M000BAG Silicon Labs Si510 200MHz 2.5V ±25ppm
                510ABA200M000BAG Silicon Labs Si510 200MHz 3.3V ±25ppm
                530FA156M250DG Silicon Labs Si530 156.25MHz 2.5V ±50ppm
                531BC000110DG Silicon Labs Si531 148.35165MHz 3.3V ±7ppm
                535FB125M000DG Silicon Labs Si535 125MHz 2.5V ±20ppm
                SI50122-A4-GM Silicon Labs SI50122-A4 100MHz 2.25 V ~ 3.63 V +100ppm
                511ABA156M250AAGR Silicon Labs Si511 156.25MHz 3.3V ±25ppm
                530FC125M000DG Silicon Labs Si530 125MHz 2.5V ±7ppm
                531BC200M000DG Silicon Labs Si531 200MHz 3.3V ±7ppm
                531BC250M000DG Silicon Labs Si531 250MHz 3.3V ±7ppm
                530AC622M080DG Silicon Labs Si530 622.08MHz 3.3V ±7ppm
                511FBA100M000BAG Silicon Labs Si511 100MHz 2.5V ±25ppm
                511BBA106M250BAG Silicon Labs Si511 106.25MHz 3.3V ±25ppm
                510BBA156M250AAG Silicon Labs Si510 156.25MHz 3.3V ±25ppm
                510ABA156M250AAG Silicon Labs Si510 156.25MHz 3.3V ±25ppm
                531BC125M000DG Silicon Labs Si531 125MHz 3.3V ±7ppm
                530AC125M000DG Silicon Labs Si530 125MHz 3.3V ±7ppm
                531FB106M250DG Silicon Labs Si531 106.25MHz 2.5V ±20ppm
                531AC156M250DG Silicon Labs Si531 156.25MHz 3.3V ±7ppm
                531AC200M000DG Silicon Labs Si531 200MHz 3.3V ±7ppm
                531BC148M500DG Silicon Labs Si531 148.5MHz 3.3V ±7ppm
                530AC200M000DG Silicon Labs Si530 200MHz 3.3V ±7ppm
                530BC200M000DG Silicon Labs Si530 200MHz 3.3V ±7ppm
                531BC156M250DG Silicon Labs Si531 156.25MHz 3.3V ±7ppm
                530FC200M000DG Silicon Labs Si530 200MHz 2.5V ±7ppm
                536BB156M250DG Silicon Labs Si536 156.25MHz 3.3V ±20ppm
                536FB156M250DG Silicon Labs Si536 156.25MHz 2.5V ±20ppm
                536AB156M250DG Silicon Labs Si536 156.25MHz 3.3V ±20ppm
                510FBA125M000BAG Silicon Labs Si510 125MHz 2.5V ±25ppm
                511BBA000149BAG Silicon Labs Si511 74.175824MHz 3.3V ±25ppm
                510FBA100M000BAG Silicon Labs Si510 100MHz 2.5V ±25ppm
                511FBA106M250BAG Silicon Labs Si511 106.25MHz 2.5V ±25ppm
                510BBA106M250BAG Silicon Labs Si510 106.25MHz 3.3V ±25ppm
                511BBA125M000AAG Silicon Labs Si511 125MHz 3.3V ±25ppm
                510BBA100M000AAG Silicon Labs Si510 100MHz 3.3V ±25ppm
                510BBA125M000AAG Silicon Labs Si510 125MHz 3.3V ±25ppm
                511FBA100M000AAG Silicon Labs Si511 100MHz 2.5V ±25ppm
                511BBA106M250AAG Silicon Labs Si511 106.25MHz 3.3V ±25ppm
                511FBA148M500BAG Silicon Labs Si511 148.5MHz 2.5V ±25ppm
                510FBA148M500BAG Silicon Labs Si510 148.5MHz 2.5V ±25ppm
                511BBA156M250BAG Silicon晶振 Si511 156.25MHz 3.3V ±25ppm
                511FBA156M250BAG Silicon Labs Si511 156.25MHz 2.5V ±25ppm
                510BBA148M500BAG Silicon Labs Si510 148.5MHz 3.3V ±25ppm
                511BBA156M250AAG Silicon Labs Si511 156.25MHz 3.3V ±25ppm
                510FBA156M250AAG Silicon Labs Si510 156.25MHz 2.5V ±25ppm
                511ABA155M520AAG Silicon Labs Si511 155.52MHz 3.3V ±25ppm
                510FBA148M500AAG Silicon Labs Si510 148.5MHz 2.5V ±25ppm
                511BBA155M520AAG Silicon Labs Si511 155.52MHz 3.3V ±25ppm
                510BBA148M500AAG Silicon Labs Si510 148.5MHz 3.3V ±25ppm
                510ABA148M500AAG Silicon Labs Si510 148.5MHz 3.3V ±25ppm
                5