X1G005591031100日本EPSON爱普生石英晶体振荡器的结构变化
金属壳封装等效电路与金属板之间的静电电容；L、C为压电谐振的等效参量；R为↑振动磨擦损耗的等效电阻.石英晶体谐振器存在一个串联谐振频率fos（1/2π）,爱普生晶振同时也存在一个并ξ　联谐振频率fop（1/2π).由于CoC,fop与fos之间之差值卐很小,并且RωOL,R1/ωOC,所以谐振电路的品质因数Q非常高（可达◆数百万）.

X1G005591031100日本EPSON晶振,爱普生石英晶体振荡器

爱普生︼有源晶振编码	型号	频率	长X宽X高	输出波	电源电压	工作温度	频差	最大值
X1G005591006000	SG-8018CE	23.040000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591006100	SG-8018CE	28.636360MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591006200	SG-8018CE	14.430000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591006300	SG-8018CE	8.439025MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591006400	SG-8018CE	29.491200MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591006500	SG-8018CE	22.222200MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591031100	SG-8018CE	30.000000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591006600	SG-8018CE	19.660800MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591006700	SG-8018CE	6.000000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591006800	SG-8018CE	7.680000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591006900	SG-8018CE	74.250000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.2mA
X1G005591007000	SG-8018CE	88.888000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.9mA
X1G005591007100	SG-8018CE	88.888000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.9mA
X1G005591007200	SG-8018CE	12.500000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591007300	SG-8018CE	148.500000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤8.1mA
X1G005591007400	SG-8018CE	74.250000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.2mA
X1G005591007500	SG-8018CE	57.272720MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.2mA
X1G005591007600	SG-8018CE	37.125000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591007700	SG-8018CE	19.200000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591007800	SG-8018CE	6.005284MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591007900	SG-8018CE	57.209760MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤5.2mA
X1G005591008000	SG-8018CE	10.000000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤3.5mA
X1G005591008100	SG-8018CE	133.000000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤8.1mA
X1G005591008200	SG-8018CE	32.400000MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA
X1G005591008300	SG-8018CE	22.579200MHz	3.20x2.50x1.20mm	CMOS	1.620to3.630V	-40to105°C	+/-50ppm	≤4.4mA

石英晶振振荡器SPXO的总精度（包括起始精度和随温度、电压及负载产生的变化）可以达到±25ppm.SPXO既无温度补偿也无温度控制措√施,其频率温度特性几乎完全由石英晶体振子的频率温度特性所决定.在0～70℃范围内,日产晶振SPXO的频率稳定度通常为20～1000ppm,SPXO可以用作钟频振荡器.温度补偿晶∞体振荡器TCXO是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器.X1G005591031100日本EPSON晶振,爱普生石英晶体振荡器

从而使Ψ石英晶体谐振器组成的振荡器频率稳定度十分高,可达10－12/日.石英晶体振荡器的振荡频率既可近似工作于fos处,有源晶体振荡器也可工作在fop附近,因此∑　石英晶体振荡器可分串联型和并联型◣两种.用石英晶体谐振器及其等效电路,取代LC振荡器中构成谐振回路的电感（L）和电容（C）元件,则很容易理解晶体振荡器的工作原理.X1G005591031100日本EPSON晶振,爱普生石英晶体振荡器